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  Datasheet File OCR Text:
 SHINDENGEN
General Purpose Rectifiers
Single
D4F60
600V 4A
OUTLINE DIMENSIONS
Case : 2F Unit : mm
RATINGS
*oeAbsolute Maximum Ratings (If not specified Tl=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55*150 *Z Operating Junction Temperature Tj 150 *Z Maximum Reverse Voltage V RM 600 V 50Hz sine wave, R-load Tl=68*Z 4 Average Rectified Forward Current 50Hz sine wave, R-load Ta=25*Z On alumina substrate A IO 1.85 50Hz sine wave, R-load Ta=25*Z On glass-epoxy substrate 1.3 Peak Surge Forward Current IFSM50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25*Z A 200 2 1ms*...t*10*" Current squared time It A2 s 150 *oeElectrical Characteristics (If not specified Tl=25*Z) Item Symbol Conditions Forward Voltage V I =4A FF Pulse measurement Reverse Current IR V=600V R Pulse measurement AEjl junction to lead Thermal Resistance AEjajunction to ambient, On alumina substrate junction to ambient, On glass-epoxy substrate Ratings Unit Max.0.95 V Max.10 EA Max.23 Max.80 *Z/W Max.115
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
D4F60
100
Forward Voltage
10
Forward Current IF [A]
Tl=150C [TYP]
Tl=25C [TYP]
1
Pulse measurement per diode
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Forward Voltage VF [V]
D4F60
5
Forward Power Dissipation
Forward Power Dissipation PF [W]
4 SIN
3
2
1
0
0
1
2
3
4
5
Average Rectified Forward Current IO [A]
Tj = 150C Sine wave
D4F60
2.5
Derating Curve
Average Rectified Forward Current IO [A]
2
SIN
Alumina substrate Soldering land 2mm Conductor layer 20m Substrate thickness 0.64mm
1.5
1
0.5
0
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta [C]
VR = VRM 0 0
IO
VR tp D=tp /T T
D4F60
2
Derating Curve
Average Rectified Forward Current IO [A]
1.5 SIN
Glass-epoxy substrate Soldering land 2mm Conductor layer 35m
1
0.5
0
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta [C]
VR = VRM 0 0
IO
VR tp D=tp /T T
D4F60
6
Derating Curve
Average Rectified Forward Current IO [A]
5 SIN 4
3
2
1
0
0
20
40
60
80
100
120
140
160
Lead Temperature Tl [C]
VR = VRM 0 0
IO
VR tp D=tp /T T
D4F60
250
Peak Surge Forward Capability
IFSM
10ms 10ms
1 cycle
200
Peak Surge Forward Current IFSM [A]
non-repetitive, sine wave, Tj=25C before surge current is applied
150
100
50
0
1
2
5
10
20
50
100
Number of Cycles [cycles]


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